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Condensed Matter > Materials Science

arXiv:1701.06057 (cond-mat)
[Submitted on 21 Jan 2017]

Title:High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride

Authors:Hadi Arjmandi-Tash, Dipankar Kalita, Zheng Han, Riadh Othmen, Cecile Berne, John Landers, Kenji Watanabe, Takashi Taniguchi, Laetitia Marty, Johann Coraux, Nedjma Bendiab, Vincent Bouchiat
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Abstract:We present a transfer-free preparation method for graphene on hexagonal boron nitride (h-BN) crystals by chemical vapor deposition of graphene via a catalytic proximity effect, i.e. activated by a Cu catalyst close-by . We demonstrate the full coverage by monolayer graphene of half-millimeter-sized hexagonal boron nitride crystals exfoliated on a copper foil prior to growth. We demonstrate that the proximity of the copper catalyst ensures high yield with the growth rate estimated between of 2\mu m/min to 5\mu m/min . Optical and electron microscopies together with confocal micro-Raman mapping confirm that graphene covers the top surface of h-BN crystals that we attribute to be a lateral growth from the supporting catalytic copper substrate. Structural and electron transport characterization of the in-situ grown graphene present an electronic mobility of about 20, 000cm2/(V.s). Comparison with graphene/h-BN stacks obtained by manual transferring of similar CVD graphene onto h-BN, confirms the better neutrality reached by the self-assembled structures.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1701.06057 [cond-mat.mtrl-sci]
  (or arXiv:1701.06057v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1701.06057

Submission history

From: Hadi Arjmandi-Tash [view email]
[v1] Sat, 21 Jan 2017 17:37:59 UTC (1,502 KB)
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