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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1701.00382 (cond-mat)
[Submitted on 2 Jan 2017 (v1), last revised 1 Jun 2017 (this version, v2)]

Title:All-thermal transistor based on stochastic switching

Authors:Rafael Sánchez, Holger Thierschmann, Laurens W. Molenkamp
View a PDF of the paper titled All-thermal transistor based on stochastic switching, by Rafael S\'anchez and 1 other authors
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Abstract:Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device working as a thermal transistor. Charge and heat currents in a two terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor hence achieving huge amplification factors. Non-thermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption.
Comments: 5 pages, 3 figures. Published version
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1701.00382 [cond-mat.mes-hall]
  (or arXiv:1701.00382v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1701.00382
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 95, 241401 (2017)
Related DOI: https://doi.org/10.1103/PhysRevB.95.241401
DOI(s) linking to related resources

Submission history

From: Rafael Sánchez [view email]
[v1] Mon, 2 Jan 2017 13:24:23 UTC (131 KB)
[v2] Thu, 1 Jun 2017 12:51:12 UTC (273 KB)
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