Title:Scattering by atomic vacancies in monolayer MoS2: Midgap states, symmetry and screening

Abstract:Lattice disorder due to atomic vacancies has detrimental impact on the transport properties of monolayer transition-metal dichalcogenides (TMDs; MX2). We theoretically study the effect of Mo and S vacancies on carrier scattering and transport in p- and n-type monolayer MoS2 based on an atomistic first-principles description of atomic disorder. Due to the presence of vacancy midgap states, the vacancies are shown to act as combined short-range and Coulomb disorder scattering centers. For the short-range scattering potential typical for atomic point defects, we surprisingly find that the threefold rotational symmetry of the vacancy sites, in most cases, leads to a strong protection against intervally scattering. In addition, we find that Mo and S vacancies resemble, respectively, strong and weak short-range disorder. The dual character of the vacancies results in a nontrivial interplay between short-range and Coulomb disorder scattering and a pronounced screening-induced temperature and density dependence of the low-temperature carrier mobility. Our work identifies atomic vacancies as the likely source of both short-range and Coulomb disorder in monolayer TMDs, and presents a unified microscopic framework where these scattering mechanisms can be treated consistently.