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Condensed Matter > Materials Science

arXiv:1609.07785 (cond-mat)
[Submitted on 25 Sep 2016]

Title:Charge puddles in a completely compensated topological insulator

Authors:C. W. Rischau, A. Ubaldini, E. Giannini, C. J. van der Beek
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Abstract:Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:1609.07785 [cond-mat.mtrl-sci]
  (or arXiv:1609.07785v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1609.07785
Journal reference: New J. Phys. 18 (2016) 073024
Related DOI: https://doi.org/10.1088/1367-2630/18/7/073024

Submission history

From: Carl Willem Rischau [view email]
[v1] Sun, 25 Sep 2016 19:21:15 UTC (512 KB)
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