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Condensed Matter > Materials Science

arXiv:1606.04657 (cond-mat)
[Submitted on 15 Jun 2016]

Title:Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

Authors:Wenwu Pan, Liang Zhu, Liyao Zhang, Yaoyao Li, Peng Wang, Xiaoyan Wu, Fan Zhang, Jun Shao, Shumin Wang
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Abstract:InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. Blue-shift of type II transitions at high excitation power density was observed and ascribed to the band-bending effect. The calculated transition energies based on 8 band k.p model fit well with the experiment results. The experimental and theoretical results show that the type-II QW design is a new promising candidate for realizing long wavelength GaAs-based light emitting devices near 1.3 um.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1606.04657 [cond-mat.mtrl-sci]
  (or arXiv:1606.04657v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1606.04657
Related DOI: https://doi.org/10.1063/1.4962288

Submission history

From: Wenwu Pan [view email]
[v1] Wed, 15 Jun 2016 06:55:02 UTC (712 KB)
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