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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1606.03812 (cond-mat)
[Submitted on 13 Jun 2016 (v1), last revised 30 Dec 2016 (this version, v2)]

Title:Gauge field in systems with spin orbit interactions and additional discrete degrees of freedom to real spin

Authors:Zhuo Bin Siu, Mansoor B.A. Jalil, Seng Ghee Tan
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Abstract:The spin gauge field formalism has been used to explain the emergence of out of plane spin accumulation in two-dimensional spin orbit interaction (SOI) systems in the presence of an in-plane electric field. The adiabatic alignment of the charge carrier spins to the momentum dependent SOI field, which changes in time due to the electric field, can be mathematically captured by the addition of a gauge term in the Hamiltonian. This gauge term acts like an effective, electric field dependent magnetization. In this work we show that this effective magnetization can be generalized to systems which include additional discrete degrees of freedom to real spin, such as the pseudospin and/or valley degrees of freedom in emerging materials like molybdenum sulphide and silicene. We show that the generalized magnetization recovers key results from the Sundaram-Niu formalism as well as from the Kubo formula. We then use the generalized magnetization to study the exemplary system of a topological insulator thin film system where the presence of both a top as well as a bottom surface provides an additional discrete degree of freedom in addition to the real spin.
Comments: The first half of this article dealing with the derivation of the effective magnetization has been superseded by arXiv:1612.09102
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1606.03812 [cond-mat.mes-hall]
  (or arXiv:1606.03812v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1606.03812

Submission history

From: Zhuo Bin Siu [view email]
[v1] Mon, 13 Jun 2016 05:04:46 UTC (2,573 KB)
[v2] Fri, 30 Dec 2016 01:31:18 UTC (2,573 KB)
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