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Physics > Instrumentation and Detectors

arXiv:1605.00828 (physics)
[Submitted on 3 May 2016 (v1), last revised 28 Mar 2017 (this version, v3)]

Title:Influence of field effects on the performance of InGaAs-based terahertz radiation detectors

Authors:Linas Minkevičius, Vincas Tamošiūnas, Martynas Kojelis, Ernestas Žąsinas, Virginijus Bukauskas, Arūnas Šetkus, Renata Butkutė, Irmantas Kašalynas, Gintaras Valušis
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Abstract:A detailed electrical characterization of high-performance bow-tie InGaAs based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Currentvoltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper insight into the processes involved in detector operation. In addition, we performed finite difference time-domain (FDTD) simulations to reveal features related to changes in the electric field due to the metal detector contacts. The investigation revealed that field effect-induced conductivity modulation is a possible mechanism contributing to the high sensitivity of the studied detectors.
Comments: 19 pages, 11 figures, 2 tables
Subjects: Instrumentation and Detectors (physics.ins-det)
Cite as: arXiv:1605.00828 [physics.ins-det]
  (or arXiv:1605.00828v3 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.1605.00828
Related DOI: https://doi.org/10.1007/s10762-017-0382-1

Submission history

From: Linas Minkevicius Mr. [view email]
[v1] Tue, 3 May 2016 10:37:00 UTC (1,668 KB)
[v2] Sat, 18 Jun 2016 07:02:06 UTC (1,605 KB)
[v3] Tue, 28 Mar 2017 11:07:49 UTC (1,255 KB)
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