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Condensed Matter > Strongly Correlated Electrons

arXiv:1603.04538v1 (cond-mat)
[Submitted on 15 Mar 2016 (this version), latest version 22 Aug 2016 (v2)]

Title:Anisotropic, multi-carrier transport at the (111) LaAlO$_3$/SrTiO$_3$ interface

Authors:Samuel Davis, V. Chandrasekhar, Z. Huang, K. Han, Ariando, T. Venkatesan
View a PDF of the paper titled Anisotropic, multi-carrier transport at the (111) LaAlO$_3$/SrTiO$_3$ interface, by Samuel Davis and 5 other authors
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Abstract:The two-dimensional electron gas that forms at the interface of the band insulators LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has attracted a great deal of atten- tion due to the rich landscape of competing physical phenomena that have been observed, including superconductivity, magnetism, gate-tunable spin-orbit in- teraction, and gate-tunable superconductor-to-insulator and metal-to-insulator transitions. Here we report low-temperature magnetotransport studies of (111) LAO/STO interface samples. We find that the transport properties are strongly anisotropic. The anisotropy manifests itself in the longitudinal resistance, but also unexpectedly in the Hall coefficient as well as the capacitance, and is accentuated by exposure to ultraviolet light, which disproportionately affects transport along one surface crystal direction. Furthermore, analysis of the low- temperature Hall coefficient and the capacitance as a function of back gate voltage indicates that in addition to electrons, holes contribute to the electrical transport. The origin of the hole conduction is not clear at present.
Subjects: Strongly Correlated Electrons (cond-mat.str-el); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1603.04538 [cond-mat.str-el]
  (or arXiv:1603.04538v1 [cond-mat.str-el] for this version)
  https://doi.org/10.48550/arXiv.1603.04538
arXiv-issued DOI via DataCite

Submission history

From: Samuel Davis K [view email]
[v1] Tue, 15 Mar 2016 03:07:48 UTC (1,550 KB)
[v2] Mon, 22 Aug 2016 15:13:22 UTC (1,956 KB)
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