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Condensed Matter > Materials Science

arXiv:1601.02214 (cond-mat)
[Submitted on 10 Jan 2016]

Title:Versatile electronic properties and exotic edge states in single-layer tetragonal silicon carbides

Authors:Chao Yang, Yuee Xie, Li-Min Liu, Yuanping Chen
View a PDF of the paper titled Versatile electronic properties and exotic edge states in single-layer tetragonal silicon carbides, by Chao Yang and 2 other authors
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Abstract:Three single-layer tetragonal silicon carbides (SiC), termed as T1,T2 and T3, are proposed by density functional theory (DFT) computations. Although the three structures have the same topological geometry, they show versatile electronic properties from semiconductor (T1), semimetal (T2) to metal (T3).The versatile properties are originated from the rich bonds between Si and C atoms. The nanoribbons of the three SiC also show interesting electronic properties. Especially, T1 nanoribbons possess exotic edge states, where electrons only distribute on one edge's silicon or carbon atoms. The band gaps of the T1 nanoribbons are constant because of no interaction between the edge states.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1601.02214 [cond-mat.mtrl-sci]
  (or arXiv:1601.02214v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1601.02214
arXiv-issued DOI via DataCite
Journal reference: Phys. Chem. Chem. Phys. (2015) 17, 11211

Submission history

From: Yuanping Chen [view email]
[v1] Sun, 10 Jan 2016 13:45:12 UTC (761 KB)
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