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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1601.01893 (cond-mat)
[Submitted on 8 Jan 2016]

Title:Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit

Authors:Yuhan Zhang, Jingsi Qiao, Si Gao, Fengrui Hu, Daowei He, Bing Wu, Ziyi Yang, Bingchen Xu, Yun Li, Yi Shi, Wei Ji, Peng Wang, Xiaoyong Wang, Min Xiao, Hangxun Xu, Jian-Bin Xu, Xinran Wang
View a PDF of the paper titled Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit, by Yuhan Zhang and 15 other authors
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Abstract:One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered mono- to tetra-layer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to band-like in subsequent layers. Such abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ~3nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.
Comments: 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1601.01893 [cond-mat.mes-hall]
  (or arXiv:1601.01893v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1601.01893
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. Lett. 116, 016602 (2016)
Related DOI: https://doi.org/10.1103/PhysRevLett.116.016602
DOI(s) linking to related resources

Submission history

From: Xinran Wang [view email]
[v1] Fri, 8 Jan 2016 15:02:08 UTC (3,167 KB)
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