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Condensed Matter > Strongly Correlated Electrons

arXiv:1508.03655 (cond-mat)
[Submitted on 14 Aug 2015]

Title:Sn-doped Bi1.1Sb0.9Te2S, a bulk topological insulator with ideal properties

Authors:S. K. Kushwaha, I. Pletikosić, T. Liang, A. Gyenis, S. H. Lapidus, Yao Tian, He Zhao, K. S. Burch, Huiwen Ji, A. V. Fedorov, Ali Yazdani, N. P. Ong, T. Valla, R. J. Cava
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Abstract:A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, have high surface state electronic mobility, and be growable as large, high quality bulk single crystals. Here we show that this major materials obstacle in the field is overcome by crystals of lightly Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS) grown by the Vertical Bridgeman method, which we characterize here via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies of the bulk and surface states, and X-ray diffraction and Raman scattering. We present this new material as a bulk topological insulator that can be reliably grown and studied in many laboratories around the world.
Comments: 21 pages, 5 figures
Subjects: Strongly Correlated Electrons (cond-mat.str-el); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1508.03655 [cond-mat.str-el]
  (or arXiv:1508.03655v1 [cond-mat.str-el] for this version)
  https://doi.org/10.48550/arXiv.1508.03655
Related DOI: https://doi.org/10.1038/ncomms11456

Submission history

From: Satya Kushwaha [view email]
[v1] Fri, 14 Aug 2015 20:47:50 UTC (1,134 KB)
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