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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1504.03593 (cond-mat)
[Submitted on 14 Apr 2015]

Title:Electron mobility in few-layer MoxW1-xS2

Authors:Hareesh Chandrasekar, Digbijoy Neelim Nath
View a PDF of the paper titled Electron mobility in few-layer MoxW1-xS2, by Hareesh Chandrasekar and Digbijoy Neelim Nath
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Abstract:In this letter, we theoretically study the electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi's Golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in MoxW1-xS2. While impurity scattering limits the mobility for low carrier density (<2x1012 cm-2), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in MoxW1-xS2. The LO phonon limited and impurity limited mobilities show opposing trends with respect to alloy mole fraction. The understanding of electron mobility in MoxW1-xS2 presented here is expected to aid the design and realization of hetero-structures and devices based on alloys of MoS2 and WS2.
Comments: 15 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1504.03593 [cond-mat.mes-hall]
  (or arXiv:1504.03593v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1504.03593
arXiv-issued DOI via DataCite
Journal reference: Mater. Res. Express 2 (2015) 095007

Submission history

From: Hareesh Chandrasekar [view email]
[v1] Tue, 14 Apr 2015 15:52:32 UTC (369 KB)
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