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Physics > Optics

arXiv:1501.04051 (physics)
[Submitted on 16 Jan 2015 (v1), last revised 1 Jul 2015 (this version, v2)]

Title:Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes

Authors:Wengang Luo, Yufei Cao, Pingan Hu, Kaiming Cai, Qi Feng, Faguang Yan, Tengfei Yan, Xinhui Zhang, Kaiyou Wang
View a PDF of the paper titled Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes, by Wengang Luo and 8 other authors
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Abstract:In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As expected, the response speed of InSe/graphene photodetectors is down to 120 {\mu}s, which is about 40 times faster than that of our InSe/metal device. And it can also be tuned by the back-gate voltage from 310 {\mu}s down to 100 {\mu}s. With high response speed, the photoresponsivity can reach as high as 60 AW-1 simultaneously. Meanwhile the InSe/graphene photodetectors possess a broad spectral range at 400-1000 nm. The design of 2D crystal/graphene electrical contacts could be important for high performance optoelectronic devices.
Comments: 27 pages, 10 figures in Advanced optical materials 2015
Subjects: Optics (physics.optics); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1501.04051 [physics.optics]
  (or arXiv:1501.04051v2 [physics.optics] for this version)
  https://doi.org/10.48550/arXiv.1501.04051
arXiv-issued DOI via DataCite

Submission history

From: Wengang Luo [view email]
[v1] Fri, 16 Jan 2015 17:03:01 UTC (868 KB)
[v2] Wed, 1 Jul 2015 01:14:17 UTC (1,230 KB)
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