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Condensed Matter > Materials Science

arXiv:1409.6887 (cond-mat)
[Submitted on 24 Sep 2014 (v1), last revised 26 Sep 2014 (this version, v2)]

Title:Origin of traps and charge transport mechanism in hafnia

Authors:D. R. Islamov (1 and 2), V. A. Gritsenko (1 and 2), C. H. Cheng (3), A. Chin (4) ((1) Rzhanov Institute of Semiconductor Physics SB RAS, (2) Novosibirsk State University, (3) National Taiwan Normal University, (4) National Chiao Tung University)
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Abstract:In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO$_2$. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal trap energy of 1.25 eV in HfO$_2$ was determined based on the charge transport experiments.
Comments: 5 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1409.6887 [cond-mat.mtrl-sci]
  (or arXiv:1409.6887v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1409.6887
Journal reference: Appl. Phys. Lett. 105 (2014) 222901
Related DOI: https://doi.org/10.1063/1.4903169

Submission history

From: Damir Islamov R. [view email]
[v1] Wed, 24 Sep 2014 10:21:43 UTC (103 KB)
[v2] Fri, 26 Sep 2014 04:55:21 UTC (103 KB)
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