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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1409.5422 (cond-mat)
[Submitted on 18 Sep 2014 (v1), last revised 9 Jul 2015 (this version, v3)]

Title:Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C

Authors:Mikhail S. Storozhevykh, Larisa V. Arapkina, Vladimir A. Yuryev
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Abstract:The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown in a flux of Ge atoms arriving on its surface. We conclude that the growth of the pyramids appearing at temperatures greater than 600 °C is controlled by kinetics rather than thermodynamic equilibrium whereas the wetting layer is an equilibrium structure.
Comments: Accepted for publication in Nanoscale Research Letters
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1409.5422 [cond-mat.mes-hall]
  (or arXiv:1409.5422v3 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1409.5422
Journal reference: Nanoscale Research Letters 10, 295 (2015)
Related DOI: https://doi.org/10.1186/s11671-015-0994-0

Submission history

From: Vladimir Yuryev [view email]
[v1] Thu, 18 Sep 2014 19:46:15 UTC (1,739 KB)
[v2] Fri, 19 Sep 2014 12:46:10 UTC (1,739 KB)
[v3] Thu, 9 Jul 2015 10:23:25 UTC (2,180 KB)
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