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Condensed Matter > Materials Science

arXiv:1406.4341 (cond-mat)
[Submitted on 17 Jun 2014]

Title:Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition

Authors:S. D. Singh, R. S. Ajimsha, C. Mukherjee, Ravi Kumar, L. M. Kukreja, Tapas Ganguli
View a PDF of the paper titled Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition, by S. D. Singh and 5 other authors
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Abstract:Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray diffraction measurements are (0001) ZnO || (111) GaP and (-1 2 -1 0) ZnO || (-1 1 0) GaP respectively. Our results of epitaxy of ZnO and its intense excitonic photoluminescence with very weak defect luminescence suggest that (111) oriented GaP can be a potential buffer layer choice for the integration of ZnO based optoelectronic devices on Si(111) substrates.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1406.4341 [cond-mat.mtrl-sci]
  (or arXiv:1406.4341v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1406.4341
arXiv-issued DOI via DataCite

Submission history

From: Shreyashkar Singh [view email]
[v1] Tue, 17 Jun 2014 12:26:17 UTC (1,997 KB)
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