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Condensed Matter > Materials Science

arXiv:1403.0495 (cond-mat)
[Submitted on 3 Mar 2014]

Title:Ferroelectric and Photovoltaic Properties of Transition Metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta Thin Films

Authors:Shalini Kumari, Nora Ortega, Ashok Kumar, J. F. Scott, R. S. Katiyar
View a PDF of the paper titled Ferroelectric and Photovoltaic Properties of Transition Metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta Thin Films, by Shalini Kumari and 4 other authors
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Abstract:We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 {\mu}C/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 {\mu}A/cm2) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of VOC and direction of short circuit current (ISC), a step forward towards the realization of noncentrosymmetric ferroelectric material sensitive to visible light.
Comments: 20 pages, 6 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1403.0495 [cond-mat.mtrl-sci]
  (or arXiv:1403.0495v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1403.0495
arXiv-issued DOI via DataCite

Submission history

From: Ashok Kumar [view email]
[v1] Mon, 3 Mar 2014 17:33:36 UTC (609 KB)
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