Title:Bulk carrier manipulation of ideal topological insulator TlBiSe$_{2}$ in reversible spin current regime

Abstract:The surfaces of three-dimensional topological insulators (TIs) provide a fertile ground for realizing new exotic phenomena as well as having the potential for wide-ranging applications such as spintronic devices and quantum computation. In particular, the Dirac point (DP) of a spin helical topological surface state is required to be located near the Fermi energy with a bulk insulating property, which offers an opportunity to realize most of the prominent electromagnetic effects that stem from topologically non-trivial this http URL$_{2}$ features an in-gap DP and a non-warped surface state that has rarely been achieved in the most studied materials, such as Bi$_{2}$Se$_{3}$. Nevertheless, investigations of the macroscopic properties of this material are limited due to the lack of bulk insulating characteristics in an as-grown crystal. Here, we have experimentally demonstrated, for the first time, bulk carrier control without introducing any guest elements that can bring it into the topological transport regime. This methodology promises to shed light on new exotic topological phenomena.