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Condensed Matter > Materials Science

arXiv:1307.6311 (cond-mat)
[Submitted on 24 Jul 2013]

Title:Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200K

Authors:Xiaojun Yang, Yuke Li, Chenyi Shen, Bingqi Si, Yunlei Sun, Qian Tao, Guanghan Cao Zhuan Xu, Fuchun Zhang
View a PDF of the paper titled Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200K, by Xiaojun Yang and 6 other authors
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Abstract:Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn0.075SO (x=0, 0.025, 0.05, 0.075, and 0.1). As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS. The Curie temperature (TC) is around 200K as x>0.05, which is among the highest TC record of known bulk DMS materials up to now. The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices.
Comments: 10 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:1307.6311 [cond-mat.mtrl-sci]
  (or arXiv:1307.6311v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1307.6311
arXiv-issued DOI via DataCite
Journal reference: Appl. Phys. Lett. 103, 022410 (2013)
Related DOI: https://doi.org/10.1063/1.4813540
DOI(s) linking to related resources

Submission history

From: Yang Xiaojun [view email]
[v1] Wed, 24 Jul 2013 07:37:13 UTC (406 KB)
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