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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1306.5292 (cond-mat)
[Submitted on 22 Jun 2013]

Title:Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Authors:Fan Yang, Chunfeng Zhang, Chentian Shi, Min Joo Park, Joon Seop Kwak, Sukkoo Jung, Yoon-Ho Choi, Xuewei Wu, Xiaoyong Wang, Min Xiao
View a PDF of the paper titled Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells, by Fan Yang and 9 other authors
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Abstract:We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related emission together with a significant reduction in bandedge emission efficiency. The experimental results can be well explained with the density-activated carrier diffusion from localized states to defect states. Such a scenario of density-activated defect recombination, as confirmed by the dependences of photoluminescence on the excitation photon energy and temperature, is a plausible origin of efficiency droop in a-plane InGaN quantum-well light-emitting diodes.
Comments: 15 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1306.5292 [cond-mat.mes-hall]
  (or arXiv:1306.5292v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1306.5292
arXiv-issued DOI via DataCite
Journal reference: Appl. Phys. Lett. 103, 123506 (2013)
Related DOI: https://doi.org/10.1063/1.4821454
DOI(s) linking to related resources

Submission history

From: Chunfeng Zhang [view email]
[v1] Sat, 22 Jun 2013 05:57:46 UTC (341 KB)
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