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Physics > Plasma Physics

arXiv:1305.4805 (physics)
[Submitted on 21 May 2013]

Title:Bimodal substrate biasing to control γ-Al2O3 deposition during reactive magnetron sputtering

Authors:Marina Prenzel, Annika Kortmann, Adrian Stein, Achim von Keudell, Farwah Nahif, Jochen M. Schneider
View a PDF of the paper titled Bimodal substrate biasing to control \gamma-Al2O3 deposition during reactive magnetron sputtering, by Marina Prenzel and 5 other authors
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Abstract:Al2O3 thin films have been deposited at substrate temperatures between 500°C to 600°C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.9 dpa for a substrate temperature of 500°C. This threshold shifts to 0.6 dpa for films grown at 550°C.
Subjects: Plasma Physics (physics.plasm-ph); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1305.4805 [physics.plasm-ph]
  (or arXiv:1305.4805v1 [physics.plasm-ph] for this version)
  https://doi.org/10.48550/arXiv.1305.4805
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1063/1.4819227
DOI(s) linking to related resources

Submission history

From: Marina Prenzel [view email]
[v1] Tue, 21 May 2013 12:59:43 UTC (1,605 KB)
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