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Condensed Matter > Materials Science

arXiv:1304.7935 (cond-mat)
[Submitted on 30 Apr 2013]

Title:Mechanism of Polarization Fatigue in BiFeO3: the Role of Schottky Barrier

Authors:Yang Zhou, Xi Zou, Lu You, Rui Guo, Zhi Shiuh Lim, Lang Chen, Guoliang Yuan, Junling Wang
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Abstract:By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge injection at the film/electrode interface leads to domain pinning and polarization fatigue in BiFeO3. Furthermore, the Schottky barrier at the interface is crucial for the charge injection process. Lowering the Schottky barrier by using low work function metals as the electrodes can also improve the fatigue property of the device, similar to what oxide electrodes can achieve.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1304.7935 [cond-mat.mtrl-sci]
  (or arXiv:1304.7935v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1304.7935
Related DOI: https://doi.org/10.1063/1.4861231

Submission history

From: Yang Zhou [view email]
[v1] Tue, 30 Apr 2013 09:51:02 UTC (796 KB)
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