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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1304.3661 (cond-mat)
[Submitted on 12 Apr 2013]

Title:Electric Field Tuning of the Surface Band Structure of Topological Insulator Sb2Te3 Thin Films

Authors:Tong Zhang, Jeonghoon Ha, Niv Levy, Young Kuk, Joseph Stroscio
View a PDF of the paper titled Electric Field Tuning of the Surface Band Structure of Topological Insulator Sb2Te3 Thin Films, by Tong Zhang and 4 other authors
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Abstract:We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect from bulk carriers vary as a function of film thickness. We observed a gap opening at the Dirac point for films thinner than four quintuple layers, due to the coupling of the top and bottom surfaces. Moreover, the top surface state band gap of the three quintuple layer films was found to be tunable by back gate, indicating the possibility of observing a topological phase transition in this system. Our results are well explained by an effective model of 3D topological insulator thin films with structure inversion asymmetry, indicating that three quintuple layer Sb2Te3 films are topologically nontrivial and belong to the quantum spin Hall insulator class.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1304.3661 [cond-mat.mes-hall]
  (or arXiv:1304.3661v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1304.3661
arXiv-issued DOI via DataCite
Journal reference: Phys, Rev. Lett. 111 (2014) 056803
Related DOI: https://doi.org/10.1103/PhysRevLett.111.056803
DOI(s) linking to related resources

Submission history

From: Joseph Stroscio [view email]
[v1] Fri, 12 Apr 2013 15:34:30 UTC (1,686 KB)
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