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Condensed Matter > Materials Science

arXiv:1303.4641 (cond-mat)
[Submitted on 19 Mar 2013]

Title:Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

Authors:Amit Kumar Sahoo, Sébastien Fregonese, Mario Weiß, Nathalie Malbert, Thomas Zimmer
View a PDF of the paper titled Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation, by Amit Kumar Sahoo and 4 other authors
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Abstract:This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified through transient electro-thermal simulations. The measurements have been carried out over pulses applied at Base and Collector terminals simultaneously and the time response of Collector current increase due to self-heating effect are obtained. Compared to previous approach, a complete calibration has been performed including all the passive elements such as coaxial cables, connectors and bias network. Furthermore, time domain junction temperature variations, current of heat flux and lattice temperature distribution have been obtained numerically by means of 3D electro-thermal device simulations. The thermal parameters extracted from measurements using HiCuM HBT compact model have been verified with the parameters extracted from electro-thermal transient simulation. It has been shown that, the standard R-C thermal network is not sufficient to accurately model the thermal spreading behavior and therefore a recursive network has been employed which is more physical and suitable for transient electro-thermal modeling.
Subjects: Materials Science (cond-mat.mtrl-sci); Instrumentation and Detectors (physics.ins-det)
Cite as: arXiv:1303.4641 [cond-mat.mtrl-sci]
  (or arXiv:1303.4641v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1303.4641
arXiv-issued DOI via DataCite
Journal reference: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European. IEEE, 2011. S. 239-242
Related DOI: https://doi.org/10.1109/ESSDERC.2011.6044190
DOI(s) linking to related resources

Submission history

From: Mario Weiss [view email]
[v1] Tue, 19 Mar 2013 15:46:32 UTC (637 KB)
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