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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1302.5716 (cond-mat)
[Submitted on 22 Feb 2013]

Title:Design principles for HgTe based topological insulator devices

Authors:Parijat Sengupta, Tillmann Kubis, Yaohua Tan, Michael Povolotskyi, Gerhard Klimeck
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Abstract:The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier(CdTe) and well-region(HgTe) are altered by replacing them with the alloy Cd$_{x}% $Hg$_{1-x}$Te of various stoichiometries, the critical width can be this http URL critical quantum well width is shown to depend on temperature, applied stress, growth directions and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.
Comments: 8 pages, 13 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1302.5716 [cond-mat.mes-hall]
  (or arXiv:1302.5716v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1302.5716
Related DOI: https://doi.org/10.1063/1.4813877

Submission history

From: Parijat Sengupta [view email]
[v1] Fri, 22 Feb 2013 21:29:33 UTC (996 KB)
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