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Condensed Matter > Materials Science

arXiv:1212.3394 (cond-mat)
[Submitted on 14 Dec 2012 (v1), last revised 22 May 2013 (this version, v2)]

Title:Doping effect on thermoelectric properties of MoS$_2$

Authors:Huaihong Guo, Teng Yang, Peng Tao, Zhidong Zhang
View a PDF of the paper titled Doping effect on thermoelectric properties of MoS$_2$, by Huaihong Guo and Teng Yang and Peng Tao and Zhidong Zhang
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Abstract:We systematically study thermoelectric properties of layered MoS$_2$ by doping, based on Boltzmann transport theory and first-principles calculations. We obtain optimal doping region (around 10$^{19}$ cm$^{-3}$) by looking closely to the temperature and doping level dependent thermopower, electrical conductivity, power factor (PF) and ultimately figure of merit (ZT) coefficient along in-plane and cross-plane directions. MoS$_2$ has a vanishingly small anisotropy of thermopower but a big anisotropy of electrical conductivity and electronic thermal conductivity in optimal doping region. $\kappa_e$ is comparable to $\kappa_l$ in the plane while $\kappa_l$ dominates over $\kappa_e$ across the plane. ZT can reach as high as 0.3 at around 700 K. In-plane direction is demonstrated to be more preferable for thermoelectric applications of MoS$_2$ by doping.
Comments: 5 pages, 6 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1212.3394 [cond-mat.mtrl-sci]
  (or arXiv:1212.3394v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1212.3394
arXiv-issued DOI via DataCite

Submission history

From: Teng Yang [view email]
[v1] Fri, 14 Dec 2012 05:34:55 UTC (2,224 KB)
[v2] Wed, 22 May 2013 02:18:28 UTC (2,001 KB)
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