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Condensed Matter > Superconductivity

arXiv:1203.6007 (cond-mat)
[Submitted on 27 Mar 2012]

Title:Shadow evaporation of epitaxial Al/Al2O3/Al tunnel junctions on sapphire utilizing an inorganic bilayer mask

Authors:Paul B. Welander, Vladimir Bolkhovsky, Terence J. Weir, Mark A. Gouker, William D. Oliver
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Abstract:This letter describes a new inorganic shadow mask that has been employed for the evaporation of all-epitaxial Al/Al2O3/Al superconducting tunnel junctions. Organic resists that are commonly used for shadow masks and other lift-off processes are not compatible with ultra-high vacuum deposition systems, and they can break down at even moderately elevated temperatures. The inorganic mask described herein does not suffer these same shortcomings. It was fabricated from a Ge/Nb bilayer, comprising suspended Nb bridges supported by an undercut Ge sacrificial layer. Utilizing such a bilayer mask on C-plane sapphire, the growth of epitaxial Al tunnel junctions was achieved using molecular beam epitaxy. Crystalline Al2O3 was grown diffusively at 300 C in a molecular oxygen background of 2.0 utorr, while amorphous oxide was grown at room temperature and 25 mtorr. A variety of analysis techniques were employed to evaluate the materials, and tunnel junction current-voltage characteristics were measured at millikelvin temperatures.
Comments: 4 pages, 4 figures
Subjects: Superconductivity (cond-mat.supr-con); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1203.6007 [cond-mat.supr-con]
  (or arXiv:1203.6007v1 [cond-mat.supr-con] for this version)
  https://doi.org/10.48550/arXiv.1203.6007

Submission history

From: Paul Welander [view email]
[v1] Tue, 27 Mar 2012 16:02:04 UTC (2,814 KB)
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