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Condensed Matter > Materials Science

arXiv:1202.5771 (cond-mat)
[Submitted on 26 Feb 2012]

Title:A unique metal-semiconductor interface and resultant electron transfer phenomenon

Authors:S. L. Taft
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Abstract:An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the semiconductor substrate. The unique interface acts as a one-way (rectifying) open gateway and was first identified in reduced rutile polycrystalline titanium dioxide (an n-type semiconductor) to Group VIII (noble) metal particles. The interface significantly affects the Schottky barrier height resulting in electron transfer to the metal particles from the reduced rutile titanium dioxide (TiO2) based on their respective work functions. The result is a negative charge on the metal particles which is of sufficient magnitude and duration to provide cathodic protection of the metal particles from surface oxidation.
Comments: 11 pages, 7 figures, 5 tables
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1202.5771 [cond-mat.mtrl-sci]
  (or arXiv:1202.5771v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1202.5771

Submission history

From: Susan Taft [view email]
[v1] Sun, 26 Feb 2012 16:16:28 UTC (448 KB)
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