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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1202.3391 (cond-mat)
[Submitted on 15 Feb 2012]

Title:The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition

Authors:Han Liu, Kun Xu, Xujie Zhang, Peide D. Ye
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Abstract:We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum(TMA) and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the semiconductor surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones Potentials, which could guide future optimization of the ALD process on 2D crystals.
Comments: submitted to Appl. Phys. Lett
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1202.3391 [cond-mat.mes-hall]
  (or arXiv:1202.3391v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1202.3391
Journal reference: Appl. Phys. Lett. 100, 152115 (2012)
Related DOI: https://doi.org/10.1063/1.3703595

Submission history

From: Han Liu [view email]
[v1] Wed, 15 Feb 2012 18:07:36 UTC (427 KB)
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