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Condensed Matter > Materials Science

arXiv:1202.3298v1 (cond-mat)
[Submitted on 15 Feb 2012 (this version), latest version 31 Jan 2013 (v2)]

Title:Metal to semiconductor transition in lightly Al doped ZnO thin films grown by sequential pulsed laser deposition

Authors:Amit K. Das, P. Misra, R. S. Ajimsha, D. M. Phase, L. M. Kukreja
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Abstract:Metal to semiconductor transition (MST) was observed in the temperature dependent resitivity measurements in lightly Al doped ZnO (AZO) thin films with different Al concentration in the range from 0 to ~ 0.5 % grown by sequential pulsed laser deposition. MST transition temperature in the AZO films was found to decrease with increasing Al concentration. The ~ 0.5 % doped AZO film showed metallic behavior at all the temperature range without any MST. The MST and the associated variation of MST transition temperature with Al concentration was explained on the basis of competition between carrier activation behavior and various scattering mechanisms.
Comments: 3 figures, 16 pages
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1202.3298 [cond-mat.mtrl-sci]
  (or arXiv:1202.3298v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1202.3298
Related DOI: https://doi.org/10.1063/1.4765733

Submission history

From: Amit Das [view email]
[v1] Wed, 15 Feb 2012 12:44:21 UTC (370 KB)
[v2] Thu, 31 Jan 2013 04:31:28 UTC (948 KB)
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