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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1106.4618 (cond-mat)
[Submitted on 23 Jun 2011]

Title:Spin dephasing in III-V nanowires

Authors:Ashish Kumar, Bahniman Ghosh
View a PDF of the paper titled Spin dephasing in III-V nanowires, by Ashish Kumar and 1 other authors
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Abstract:We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. Spin dephasing in III-V channels is caused due to D'yakonov- Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba spin-orbit interaction). The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.
Comments: 15 pages, 7 figures included
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1106.4618 [cond-mat.mes-hall]
  (or arXiv:1106.4618v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1106.4618
arXiv-issued DOI via DataCite

Submission history

From: Ashish Kumar [view email]
[v1] Thu, 23 Jun 2011 03:56:52 UTC (748 KB)
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