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Condensed Matter > Materials Science

arXiv:1102.4720 (cond-mat)
[Submitted on 23 Feb 2011]

Title:Pt/Ti/Al2O3/Al tunnel junctions showing electroforming-free bipolar resistive switching behavior

Authors:Doo Seok Jeong, Byung-ki Cheong, Hermann Kohlstedt
View a PDF of the paper titled Pt/Ti/Al2O3/Al tunnel junctions showing electroforming-free bipolar resistive switching behavior, by Doo Seok Jeong and 2 other authors
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Abstract:We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its low resistance state, suggesting the possibility for multi-level-operation. A mechanism for the bipolar switching is qualitatively discussed in terms of the modulation of the tunnel barrier by the reactive Ti layer on top of the barrier.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1102.4720 [cond-mat.mtrl-sci]
  (or arXiv:1102.4720v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1102.4720
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1016/j.sse.2011.05.028
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Submission history

From: Doo Seok Jeong [view email]
[v1] Wed, 23 Feb 2011 12:10:10 UTC (353 KB)
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