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Condensed Matter > Materials Science

arXiv:1102.2954 (cond-mat)
[Submitted on 15 Feb 2011]

Title:Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points

Authors:Ryo Nouchi, Tatsuya Saito, Katsumi Tanigaki
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Abstract:A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward more negative (positive) gate voltages for electron (hole) doping by shortening of the interelectrode spacing. The shift of the Dirac point is accompanied by an enhancement of the electron-hole conductivity asymmetry. Experimentally determined carrier types may be explained in terms of the metal work functions modified by interactions with graphene.
Comments: 12 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1102.2954 [cond-mat.mtrl-sci]
  (or arXiv:1102.2954v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1102.2954
arXiv-issued DOI via DataCite
Journal reference: Appl. Phys. Express 4 (2011) 035101
Related DOI: https://doi.org/10.1143/APEX.4.035101
DOI(s) linking to related resources

Submission history

From: Ryo Nouchi [view email]
[v1] Tue, 15 Feb 2011 03:38:05 UTC (157 KB)
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