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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1102.2780 (cond-mat)
[Submitted on 14 Feb 2011]

Title:Detection of variable tunneling rates in silicon quantum dots

Authors:A. Rossi, T. Ferrus, W. Lin, T. Kodera, D.A. Williams, S. Oda
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Abstract:Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates.
Comments: 4 pages, 3 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1102.2780 [cond-mat.mes-hall]
  (or arXiv:1102.2780v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1102.2780
Journal reference: Applied Physics Letters 98, 133506 (2011)
Related DOI: https://doi.org/10.1063/1.3573991

Submission history

From: Alessandro Rossi [view email]
[v1] Mon, 14 Feb 2011 14:29:41 UTC (2,107 KB)
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