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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1102.2572 (cond-mat)
[Submitted on 13 Feb 2011]

Title:Underlap Optimization in HFinFET in Presence of Interface Traps

Authors:Kausik Majumdar, Rajaram S. Konjady, Raj Tejas S., Navakanta Bhat
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Abstract:In this work, using 3D device simulation, we perform an extensive gate to source/drain underlap optimization for the recently proposed hybrid transistor, HFinFET, to show that the underlap lengths can be suitably tuned to improve the on-off ratio as well as the subthreshold characteristics in an ultra-short channel n-type device without significant on performance degradation. We also show that the underlap knob can be tuned to mitigate the device quality degradation in presence of interface traps. The obtained results are shown to be very promising when compared against ITRS 2009 performance projections as well as published state of the art planar and non-planar Silicon MOSFET data of comparable gate lengths using standard benchmarking techniques.
Comments: 5 pages, 8 figures; Accepted in IEEE Transactions on Nanotechnology
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1102.2572 [cond-mat.mes-hall]
  (or arXiv:1102.2572v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1102.2572
Related DOI: https://doi.org/10.1109/TNANO.2011.2119401

Submission history

From: Kausik Majumdar [view email]
[v1] Sun, 13 Feb 2011 09:37:30 UTC (281 KB)
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