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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1012.4252 (cond-mat)
[Submitted on 20 Dec 2010]

Title:Fully electrically read-write device out of a ferromagnetic semiconductor

Authors:S. Mark, P. Dürrenfeld, K. Pappert, L. Ebel, K. Brunner, C. Gould, L.W. Molenkamp
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Abstract:We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.
Comments: 4 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1012.4252 [cond-mat.mes-hall]
  (or arXiv:1012.4252v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1012.4252
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1103/PhysRevLett.106.057204
DOI(s) linking to related resources

Submission history

From: Charles Gould [view email]
[v1] Mon, 20 Dec 2010 07:57:40 UTC (2,562 KB)
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