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Condensed Matter > Materials Science

arXiv:1012.1917 (cond-mat)
[Submitted on 9 Dec 2010]

Title:Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing

Authors:Yota Takamura, Takuya Sakurai, Ryosho Nakane, Yusuke Shuto, Satoshi Sugahara
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Abstract:The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with the out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the [001] direction with the in-plane epitaxial relation of CFG[100]||GOI[100], although the film slightly contained a texture component. The strong (111) and (200) superlattice diffraction intensities indicated that the CFG film had a high degree of order for the L21 structure. Cross-sectional high-resolution transmission electron microscopy images of the film implied that the film had the dominant epitaxial and slight texture components, which was consistent with the XRD measurements. The epitaxial component was grown directly on the BOX layer of the SOI substrate without the formation of any interfacial layer.
Comments: 16 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1012.1917 [cond-mat.mtrl-sci]
  (or arXiv:1012.1917v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1012.1917
Journal reference: J. Appl. Phys. vol. 109, no. 7, pp. 07B768/1-3, 2011
Related DOI: https://doi.org/10.1063/1.3562042

Submission history

From: Yota Takamura [view email]
[v1] Thu, 9 Dec 2010 03:45:30 UTC (721 KB)
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