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Condensed Matter > Materials Science

arXiv:1012.0968 (cond-mat)
[Submitted on 5 Dec 2010]

Title:Weak field magnetoresistance of narrow-gap semiconductor InSb

Authors:R. Yang, K. H. Gao, Y. H. Zhang, P. P. Chen, G. Yu, L. M. Wei, T. Lin, N. Dai, J. H. Chu
View a PDF of the paper titled Weak field magnetoresistance of narrow-gap semiconductor InSb, by R. Yang and 8 other authors
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Abstract:The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.
Comments: revised
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1012.0968 [cond-mat.mtrl-sci]
  (or arXiv:1012.0968v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1012.0968
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1063/1.3559900
DOI(s) linking to related resources

Submission history

From: Rui Yang [view email]
[v1] Sun, 5 Dec 2010 02:46:43 UTC (424 KB)
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