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Condensed Matter > Materials Science

arXiv:1008.4124 (cond-mat)
[Submitted on 24 Aug 2010]

Title:Polarization-engineered GaN/InGaN/GaN tunnel diodes

Authors:Sriram Krishnamoorthy, Digbijoy N. Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, Siddharth Rajan
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Abstract:We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.
Comments: 3 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Other Condensed Matter (cond-mat.other); Quantum Physics (quant-ph)
Cite as: arXiv:1008.4124 [cond-mat.mtrl-sci]
  (or arXiv:1008.4124v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1008.4124
Journal reference: Appl. Phys. Lett. 97, 203502 (2010)
Related DOI: https://doi.org/10.1063/1.3517481

Submission history

From: Sriram Krishnamoorthy [view email]
[v1] Tue, 24 Aug 2010 19:56:02 UTC (190 KB)
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