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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1006.5685 (cond-mat)
[Submitted on 29 Jun 2010]

Title:Mapping spin-orbit splitting in strained InGaAs epilayers

Authors:B. M. Norman, C. J. Trowbridge, J. Stephens, A. C. Gossard, D. D. Awschalom, V. Sih
View a PDF of the paper titled Mapping spin-orbit splitting in strained InGaAs epilayers, by B. M. Norman and 5 other authors
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Abstract:Time- and spatially-resolved Faraday rotation spectroscopy is used to measure the magnitude and direction of the momentum-dependent spin splitting in strained InGaAs epilayers. The epilayers are lattice-matched to the GaAs substrate and designed to reduce inhomogeneous effects related to strain relaxation. Measurements of momentum-dependent spin splitting as a function of electron spin drift velocity along [100], [010], [110] and [1$\overline{1}$0] directions enable separation of isotropic and anisotropic effective magnetic fields that arise from uniaxial and biaxial strain along $\langle$110$\rangle$. We relate our findings to previous measurements and theoretical predictions of spin splitting for inversion symmetry breaking in bulk strained semiconductors.
Comments: 5 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1006.5685 [cond-mat.mes-hall]
  (or arXiv:1006.5685v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1006.5685
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 82, 081304(R) (2010)
Related DOI: https://doi.org/10.1103/PhysRevB.82.081304
DOI(s) linking to related resources

Submission history

From: Vanessa Sih [view email]
[v1] Tue, 29 Jun 2010 17:30:41 UTC (153 KB)
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