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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1002.2650 (cond-mat)
[Submitted on 12 Feb 2010]

Title:Experimental Study of Resistive Bistability in Metal Oxide Junctions

Authors:Zhongkui Tan, Vijay Patel, Konstantin K. Likharev, Dong Su, Yimei Zhu
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Abstract: We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbOx, CuOx and TiOx have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with or without rapid thermal post-annealing (RTA). The resistive bistability effect has been observed for all these materials, with particularly high endurance (over 1000 switching cycles) obtained for single-layer TiO2 junctions, and the best reproducibility reached for multi-layer junctions of the same material. Fabrication optimization has allowed us to improve the OFF/ON resistance ratio to about 1000, but the sample-to-sample reproducibility is so far lower than that required for large scale integration.
Comments: 25 pages, 8 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1002.2650 [cond-mat.mes-hall]
  (or arXiv:1002.2650v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1002.2650
Related DOI: https://doi.org/10.1007/s00339-010-6079-0

Submission history

From: Zhongkui Tan [view email]
[v1] Fri, 12 Feb 2010 21:51:48 UTC (245 KB)
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