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Condensed Matter > Other Condensed Matter

arXiv:0910.2606 (cond-mat)
[Submitted on 14 Oct 2009]

Title:Introduction to Spin-Polarized Ballistic Hot Electron Injection and Detection in Silicon

Authors:Ian Appelbaum
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Abstract: Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plagues spin injection in semiconductors with ferromagnetic ohmic contacts. Through the spin-dependent mean-free-path, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with Silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. An appropriate quantitative model that accurately simulates the device characteristics for both undoped and doped spin transport channels is described; it can be used to determine the spin current velocity, diffusion constant, and spin lifetime, constituting a spin "Haynes-Shockley" experiment without time-of-flight techniques. A perspective on the future of these methods is offered as summary.
Comments: Review paper: "The Spin on Electronics!" Royal Society discussion meeting, London, 9/28/09-9/29/09
Subjects: Other Condensed Matter (cond-mat.other); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0910.2606 [cond-mat.other]
  (or arXiv:0910.2606v1 [cond-mat.other] for this version)
  https://doi.org/10.48550/arXiv.0910.2606
arXiv-issued DOI via DataCite

Submission history

From: Ian Appelbaum [view email]
[v1] Wed, 14 Oct 2009 13:10:51 UTC (179 KB)
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