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Condensed Matter > Materials Science

arXiv:0908.1282 (cond-mat)
[Submitted on 10 Aug 2009 (v1), last revised 1 Sep 2009 (this version, v2)]

Title:Ab initio study of the interface properties of Fe/GaAs(110)

Authors:A. Grünebohm, H. C. Herper, P. Entel
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Abstract: We have investigated the initial growth of Fe on GaAs(110) by means of density functional theory. In contrast to the conventionally used (001)-surface the (110)-surface does not reconstruct. Therefore, a flat interface and small diffusion can be expected, which makes Fe/GaAs(110) a possible candidate for spintronic applications. Since experimentally, the actual quality of the interface seems to depend on the growth conditions, e.g., on the flux rate, we simulate the effect of different flux rates by different Fe coverages of the semiconductor surface. Systems with low coverages are highly diffusive. With increasing amount of Fe, i.e., higher flux rates, a flat interface becomes more stable. The magnetic structure strongly depends on the Fe coverage but no quenching of the magnetic moments is observed in our calculations.
Comments: 9 pages, 8 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0908.1282 [cond-mat.mtrl-sci]
  (or arXiv:0908.1282v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0908.1282
Journal reference: Phys. Rev. B 80, 064417 (2009)
Related DOI: https://doi.org/10.1103/PhysRevB.80.064417

Submission history

From: Anna Grünebohm [view email]
[v1] Mon, 10 Aug 2009 09:04:08 UTC (2,888 KB)
[v2] Tue, 1 Sep 2009 09:19:34 UTC (2,888 KB)
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