Title:Thermoelectric properties of the electrically gated bismuth telluride nanowires

Abstract: We studied theoretically the effect of the perpendicular electric field on the thermoelectric properties of the intrinsic, n-type and P-type bismuth telluride nanowires grown along the [110] direction. The electronic structure and the wave functions were calculated by solving self-consistently the system of the Schrodinger and Poisson equations using the spectral method. The Poisson equation was solved in terms of the Newton - Raphson method within the predictor-corrector approach. The electron - electron, e.g., exchange - correlation, interactions were taken into account in the analysis. In the framework of the relaxation-time approximation we investigated the Seebeck coefficient, thermal conductivity and the thermoelectric figure of merit ZT as the functions of temperature, nanowire thickness, gate voltage, and excess electron (hole) concentrations. The results of our calculations show that the external perpendicular electric field can increase the Seebeck coefficient of the bismuth telluride nanowires with thicknesses of 7 - 15 nm by nearly a factor of 2 and enhance ZT by an order of magnitude. At room temperature, ZT can reach a value as high as 3.4 under the action of the external perpendicular electric field for realistic widths of the nanowires. Our results suggest a new method for the enhancement of the efficiency of thermoelectric elements, and possible new applications for the thermoelectric on-side cooling and thermal management of electronic chips.