Title:Breakdown of the N=0 Quantum Hall State in graphene: two insulating regimes

Abstract: We have investigated the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in the high-mobility graphene sample in magnetic fields up to 18 T. We observe a strong increase in the resistivity with decreasing Landau level filling $\nu$, indicating a breakdown of the delocalized QHE transport for $\nu < 2$, where we identify two insulating regimes. First, $\rho_{xx}$ increases within the range of several resistance quanta $R_K$, while the Hall effect gradually disappears and the off-diagonal resistivity $\rho_{xy}$ eventually becomes independent of the direction of magnetic field, consistent with the Hall insulator (HI) with local transport. Then, at a filling $\nu \approx 1/2$, there is a cusp in $\rho_{xx}(\nu)$ and an onset of the much faster growth with the decreasing $\nu$, indicating a transition to a collective insulator (CI) state. The likely candidate for this state is the pinned Wigner crystal.