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Condensed Matter > Materials Science

arXiv:0903.4406 (cond-mat)
[Submitted on 25 Mar 2009 (v1), last revised 2 Apr 2009 (this version, v2)]

Title:p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications

Authors:Y.S. Hor, A. Richardella, P. Roushan, Y. Xia, J.G. Checkelsky, A. Yazdani, M.Z. Hasan, N.P. Ong, R.J. Cava
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Abstract: The growth and elementary properties of p-type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3, the p-type behavior has been induced through low level substitutions (1 percent or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98Ca0.02Se3 relative to the n-type material. p-type single crystals with ab plane Seebeck coefficients of +180 microVK-1 at room temperature are reported. These crystals show a giant anomalous peak in the Seebeck coefficient at low temperatures, reaching +120 microVK-1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p-type Bi2Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.
Comments: v2: STM characterization of n and p type Bi2Se3 is added
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0903.4406 [cond-mat.mtrl-sci]
  (or arXiv:0903.4406v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0903.4406
Journal reference: Physical Review B 79, 195208 (2009)
Related DOI: https://doi.org/10.1103/PhysRevB.79.195208

Submission history

From: Bob Cava [view email]
[v1] Wed, 25 Mar 2009 17:32:01 UTC (1,781 KB)
[v2] Thu, 2 Apr 2009 14:53:55 UTC (1,764 KB)
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