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Physics > Instrumentation and Detectors

arXiv:0811.4540 (physics)
[Submitted on 27 Nov 2008]

Title:Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

Authors:Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Serena Mattiazzo, Chinh Vu
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Abstract: This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.
Comments: 5 pages, 7 figures, submitted to Nuclear Instruments and Methods A
Subjects: Instrumentation and Detectors (physics.ins-det)
Cite as: arXiv:0811.4540 [physics.ins-det]
  (or arXiv:0811.4540v1 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.0811.4540
Journal reference: Nucl.Instrum.Meth.A604:380-384,2009
Related DOI: https://doi.org/10.1016/j.nima.2009.01.178

Submission history

From: Marco Battaglia [view email]
[v1] Thu, 27 Nov 2008 13:43:21 UTC (250 KB)
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