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Condensed Matter > Materials Science

arXiv:0811.3797 (cond-mat)
[Submitted on 24 Nov 2008]

Title:Interface and electronic characterization of thin epitaxial Co3O4 films

Authors:C. A. F. Vaz, H.-Q. Wang, C. H. Ahn, V. E. Henrich, M. Z. Baykara, T. C. Schwendemann, N. Pilet, B. J. Albers, U. D. Schwarz, L. H. Zhang, Y. Zhu, J. Wang, E. I. Altman
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Abstract: The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space techniques. As-grown film surfaces are found to be relatively disordered and exhibit an oblique low energy electron diffraction (LEED) pattern associated with the O-rich CoO2 bulk termination of the (110) surface. Interface and bulk film structure are found to improve significantly with post-growth annealing at 820 K in air and display sharp rectangular LEED patterns, suggesting a surface stoichiometry of the alternative Co2O2 bulk termination of the (110) surface. Non-contact atomic force microscopy demonstrates the presence of wide terraces separated by atomic steps in the annealed films that are not present in the as-grown structures; the step height of ~ 2.7 A corresponds to two atomic layers and confirms a single termination for the annealed films, consistent with the LEED results. A model of the (1 * 1) surfaces that allows for compensation of the polar surfaces is presented.
Comments: 8 pages, 7 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0811.3797 [cond-mat.mtrl-sci]
  (or arXiv:0811.3797v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0811.3797
Journal reference: Surface Science 603:291, 2009.
Related DOI: https://doi.org/10.1016/j.susc.2008.11.022

Submission history

From: Carlos Vaz [view email]
[v1] Mon, 24 Nov 2008 03:23:49 UTC (1,810 KB)
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