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Condensed Matter > Materials Science

arXiv:0808.3070 (cond-mat)
[Submitted on 22 Aug 2008]

Title:Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

Authors:V.F. Kovalenko, S.V. Shutov, Ye.A. Baganov, M.M. Smyikalo
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Abstract: The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from 3x1021 to 6x1022 quantum/(cm2/s) are investigated. The observed dependences are explained by formation of the density tails of states as a result of fluctuations of impurity concentration and participation of localized states of the donor impurity band in radiative transitions. Reduction of many-particle interaction at increasing of N can be connected with increasing of shielding of charge carriers by atoms of impurity.
Comments: 6 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0808.3070 [cond-mat.mtrl-sci]
  (or arXiv:0808.3070v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0808.3070
Related DOI: https://doi.org/10.1016/j.jlumin.2009.04.017

Submission history

From: Stanislav Shutov [view email]
[v1] Fri, 22 Aug 2008 12:58:36 UTC (302 KB)
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