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Condensed Matter > Materials Science

arXiv:0805.2967 (cond-mat)
[Submitted on 19 May 2008]

Title:Cyclotron enhancement of tunneling

Authors:M. V. Medvedeva, I. A. Larkin, S. Ujevic, L. N. Shchur, B. I. Ivlev
View a PDF of the paper titled Cyclotron enhancement of tunneling, by M. V. Medvedeva and 4 other authors
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Abstract: A state of an electron in a quantum wire or a thin film becomes metastable, when a static electric field is applied perpendicular to the wire direction or the film surface. The state decays via tunneling through the created potential barrier. An additionally applied magnetic field, perpendicular to the electric field, can increase the tunneling decay rate for many orders of magnitude. This happens, when the state in the wire or the film has a velocity perpendicular to the magnetic field. According to the cyclotron effect, the velocity rotates under the barrier and becomes more aligned with the direction of tunneling. This mechanism can be called cyclotron enhancement of tunneling.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0805.2967 [cond-mat.mtrl-sci]
  (or arXiv:0805.2967v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0805.2967
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1103/PhysRevB.78.165325
DOI(s) linking to related resources

Submission history

From: Boris Ivlev [view email]
[v1] Mon, 19 May 2008 21:35:36 UTC (183 KB)
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